Package / Case  

TO-220-3 Full Pack

Mount  

Through Hole

Mounting Type  

Through Hole

Number of Pins  

3

Weight  

2.27g

Transistor Element Material  

SILICON

Power Dissipation (Max)  

39W Tc

Turn Off Delay Time  

25 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Number of Elements  

1

Current - Continuous Drain (Id) @ 25℃  

7A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

UniFET™

Published  

2004

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

MATTE TIN

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

31.3W

Case Connection  

ISOLATED

Turn On Delay Time  

6 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

900m Ω @ 3.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

940pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

16.6nC @ 10V

Rise Time  

55ns

Vgs (Max)  

±30V

Fall Time (Typ)  

35 ns

Continuous Drain Current (ID)  

7A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

5A

Drain to Source Breakdown Voltage  

500V

Pulsed Drain Current-Max (IDM)  

20A

RoHS Status  

RoHS Compliant